NPT2010

NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and saturated applications  Tunable from DC-2.2 GHz  48V Operation  Industry Standard Package  High Drain Efficiency (>60%) Applications  Defense Communications  Land Mobile Radio  Avionics  Wireless Infrastructure  ISM Applications  VHF/UHF/L-Band Radar DC-2.2 GHz 100W GaN HEMT Product Description The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 dBm) in an industry standard metal-ceramic package with a bolt down flange. RF Specifications (CW, 2.15 GHz): VDS = 48V, IDQ = 600mA, TC= 25°C Symbol Parameter Min GSS Small-signal Gain - PSAT Saturated Output Power - SAT Efficiency at Saturated Output Power GP Gain at POUT = 95W  Drain Efficiency at POUT = 95W 13.5 52.5 VDS Drain Voltage -  Ruggedness: Output Mismatch, all phase angles Typ Max 17 - Units dB 50.5 - dBm 64 - % 15 - dB 61 - % 48 - V VSWR = 10:1, No Device Damage Page 1 NDS-034 Rev. 1, 052413 NPT2010 DC Specifications: TC = 25°C Symbol Parameter Off Characteristics IDLK Drain-Source Leakage Current (VGS=-8V, VDS=160V) IGLK Gate-Source Leakage Current (VGS=-8V, VDS=0V) On Characteristics VT VGSQ RON ID, MAX Gate Threshold Voltage (VDS=48V, ID=24mA) Gate Quiescent Voltage (VDS=48V, ID=60...