NPT2020

NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Features  GaN on Si HEMT Depletion Mode Transistor  Suitable for Linear and Saturated Applications  Tunable from DC - 3.5 GHz  48 V Operation  13.5 dB Gain at 3.5 GHz  55 % Drain Efficiency at 3.5 GHz  100 % RF Tested  Standard package with bolt down flange  RoHS* Compliant and 260°C reflow compatible Description The NPT2020 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 50 W (47 dBm) in an industry standard surface mount package. The NPT2020 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology. Rev. V1 Functional Schematic RFIN / VG 1 2 RFOUT / VD 3 Flange Ordering Information Part Number Package NPT2020 Bulk Quantity NPT2020-SMBPPR Custom Sample Board1 NPT2020-SMB2 1250-1850 MHz Sample Board 1. When ordering, specify application requirements (frequency, linearity, etc.) Pin Configuration Pin No. Pin Name Function 1 RFIN / VG RF Input / Gate 2 RFOUT / VD RF Output / Drain 3 Flange2 Ground / Source 2. The Flange must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Sol...