Document
PD - 91629A
IRG4BC30W
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
• Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)
• Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
C
G E
n-channel
VCES = 600V VCE(on) max. = 2.70V
@VGE = 15V, IC = 12A
TO-220AB
Max. 600 23 12 92 92 ± 20 180 100 42 -55 to + 150
300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m)
Units V A
V mJ W
°C
Thermal Resistance
RθJC RθCS RθJA Wt
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ. ––– 0.50 ––– 1.44
Max. 1.2 ––– 80 –––
Units °C/W
g
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1
4/24/2000
IRG4BC30W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ
VCE(ON)
VGE(th) ∆VGE(th)/∆TJ gfe ICES
IGES
Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage T Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance U Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min. 600 18 — — — — 3.0 — 11 — — — —
Typ. Max. Units
—— V
—— V
0.34 — V/°C
2.1 2.7
2.45 — 1.95 —
V
— 6.0
-11 — mV/°C
16 — S
— 250 µA — 2.0
— 1000
— ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 12A
VGE = 15V
IC = 23A
See Fig.2, 5
IC = 12A , TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA VCE = 100 V, IC = 12A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres
Notes:
Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 51 76 — 7.6 11 — 18 27 — 25 —
IC = 12A nC VCC = 400V
VGE = 15V
See Fig.8
— 16 — ns TJ = 25°C
— 99 150
IC = 12A, VCC = 480V
— 67 100
VGE = 15V, RG = 23Ω
— 0.13 —
Energy losses include "tail"
— 0.13 — mJ See Fig. 9, 10, 13, 14
— 0.26 0.35
— 24 — — 17 — — 150 — — 150 —
TJ = 150°C, ns IC = 12A, VCC = 480V
VGE = 15V, RG = 23Ω Energy losses include "tail"
— 0.55 — mJ See Fig. 11,13, 14
— 7.5 — nH Measured 5mm from package
— 980 — — 71 — — 18 —
VGE = 0V pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, (See fig. 13a)
S Repetitive rating; pulse width limited by maximum junction temperature.
T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot.
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Load Current ( A )
IRG4BC30W
40
30
Square wave: 20 60 % of ra ted
voltage
For both:
D uty cycle: 50% TJ = 125°C Tsink = 90°C G ate drive as s pec ified Power D is sipation = 21W
T ria ngu la r w av e:
C lamp voltage: 80% of rated
10 Ideal diodes
0 0.1
1
10
f, Frequenc y (k Hz)
Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
A 100
I C, Collector-to-Emitter Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
VGE = 15V 20µs PULSE WIDTH 1 1 10 VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C, Collector-to-Emitter Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
1
0.1 5.0
VCC = 50V 5µs PULSE WIDTH
6.0 7.0 8.0 9.0 10.0
VGE, Gate-to-Emitter Voltage (V)
11.0
Fig. 3 - Typical Transfer Characteristics
3
I.