K3385

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3385 PACKAGE TO-251 FEATURES Low On-state Resistance 5 RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 45 mΩ MAX. (VGS = 4.0 V, ID = 15 A) Low Ciss : Ciss = 1500 pF TYP. Built-in Gate Protection Diode TO-251/TO-252 package 2SK3385-Z TO-252 (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) 5 Drain Current (Pulse) Note1 5 Total Power Dissipation (TC = 25°C) ID(DC) ID(pulse) PT Total Power Dissipation (TA = 25°C) PT Channel Temperature Tch Storage Temperature 5 Single Avalanche Current Note2 5 Single Avalanche Energy Note2 Tstg IAS EAS 60 ±20 ±30 ±100 36 1.0 150 –55 to +150 22 48 V V A A W W °C °C A mJ (TO-252) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE 5 Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 3.47 °C/W 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14472EJ1V0DS00 (1st edition) Date ...