Bias Resistor Transistor PNP Silicon
P b Lead(Pb)-Free
1 BASE
R1 R2
DTA114EE Series
COLLECTOR 3
2 EMITTER
1 2
33
...
Bias Resistor
Transistor PNP Silicon
P b Lead(Pb)-Free
1 BASE
R1 R2
DTA114EE Series
COLLECTOR 3
2 EMITTER
1 2
33
SC-89 (SOT-523F)
Maximum Ratings (TA=25°C unless otherwise noted)
Rating
Symbol
Collector-Emitter Voltage Collector-Base Voltage
VCEO VCBO
Collector Current-Continuous
IC
Value 50
50
100
Unit V V
mA
Thermal Characteristics
Characteristics Total Device Dissipation FR-5 Board FR-4 Board(1) TA=25˚C Derate above 25˚C
Thermal Resistance, Junction to Ambient(1)
Total Device Dissipation FR-5 Board FR-4 Board(2) TA=25˚C Derate above 25˚C
Thermal Resistance, Junction to Ambient(2)
Junction Temperature Range
Storage Temperature Range
1.FR-4 @ Minimum pad 2.FR-4 @1.0 x 1.0 Inch pad
Symbol
PD RθJA
PD RθJA TJ Tstg
Max
200 1.6 600
300 2.4 400 -55 to +150 -55 to +150
Unit
mW mW/ ˚C
˚C/W
mW mW/ ˚C
˚C/W ˚C ˚C
Device Marking and ResistorValues
Device
Marking R1(K)
R2(K)
DTA114EE
DTA124EE DTA144EE DTA114YE DTA114TE
DTA143TE
6A
6B 6C 6D 6E 6F
10 10
22 22
47 47 10 47 10
4.7
88
Device
DTA123EE DTA143EE DTA143ZE DTA124XE DTA123JE DTA115EE DTA144WE
Marking
6H 43 6K 6L 6M 6N 6P
R1(K)
2.2 4.7 4.7 22 2.2 100 47
R2(K)
2.2 4.7 47 47 47 100 22
WEITRON
http://www.weitron.com.tw
1/13
12-Jun-06
DTA114EE Series
WEITRON
Electrical Characteristics (TA=25˚C Unless Otherwise noted)
Characteristics
Symbol Min Typ Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage(2) IC=2.0mA, IB=0 Collector-Base Breakdown Voltage IC=10µA, IE=0
Collector-Base Cutoff V...