DB151S

DB151S-DB157S Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A 0.3 Features Rating to 1000V PRV Surge overload rating to 30 Amperes peak Glass passivated chip junctions Reliable low cost construction utilizing molded plastic technique results in inexpensive product Lead solderable per MIL-STD-202 method 208 Lead: silver plated copper, solderde plated Plastic material has UL flammability classification 94V-O Polarity symbols molded on body Weight: 0.016 ounces,0.45 grams 1± 0.1 8.3± 0.1 5± 0.2 6.3± 0.2 8.3± 0.3 DB-S 7.9± 0.2 6.4± 0.1 1.2± 0.3 10± 0.6 3.2± 0.2 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. DB 151S DB 152S DB 153S DB 154S DB 155S DB 156S DB 157S UNITS Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard Output current @TA=25 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 1.5 A Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 Operating junction temperature range Storage temperature range VRRM VRMS VDC IF(AV) 50 35 50 100 200 400 600 800 1000 70 140 280 420 560 700 100 200 400 600 800 1000 1.5 V V V A IFSM 40 A VF IR TJ TSTG 1.1 10.0 1.0 - 55 ---- + 150 - 55 ---- + 150 V μA...