Power MOSFETs
Preliminary Data Sheet
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS
ID...
Description
Preliminary Data Sheet
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS
ID25
RDS(on)
trr
IXFH8N80 800V 8A IXFH9N80 800V 9A
1.1Ω 250 ns 0.9Ω 250 ns
TO-247 AD (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS VDGR VGS VGSM ID25
IDM
IAR
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
8N80 9N80 8N80 9N80 8N80 9N80
800
800
±20
±30
8 9 32 36 8 9
V
V
V
V
A A A A A A
EAR dv/dt
PD TJ TJM Tstg Md Weight
TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Mounting torque
18 mJ 5 V/ns
180 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
300 °C
Symbol
VDSS VGS(th) IGSS IDSS RDS(on)
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA VDSS temperature coefficient
VDS = VGS, ID = 2.5 mA VGS(th) temperature coefficient
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS VGS = 0 V
TJ = 25°C TJ = 125°C
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2%
800 0.088
2 -0.257
V %/K
4.5 V %/K
±100 nA
250 µA 1 mA
8N80 9N80
1.1 Ω 0.9 Ω
© 1997 IXYS All rights reserved
TO-247 SMD*
G S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
*Add suffix letter "S" for surface mountable package
Features
International standard packag...
Similar Datasheet