MTE011N10RFP

CYStech Electronics Corp. Spec. No. : C169FP Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE011N10RFP BVDSS Features ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C  Low On Resistance RDS(ON)@VGS=10V, ID=11A  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Insulating package, front/back side insulating voltage=2500V(AC)  RoHS compliant package 100V 34A 9A 11 mΩ(typ) Symbol MTE011N10RFP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTE011N10RFP-0-UB-S Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE011N10RFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169FP Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No. : 2/ 8 Absolute Maximum Ratings (TC=25C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25C, VGS=10V (Note 1) Continuous Drain Current @TC=100C, VGS=10V (Note 1) Continuous Drain Current @TA=25C, VGS=10V (Note 2) Continuous Drain Current @TA=70C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V Avalanche Current Single Pulse Avalanche Energy @ L=0.5mH, ID=34 Amps, VDD=50V (Note 4) Repetitive Ava...