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MTE011N10RH8

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp. Spec. No. : C169H8 Issued Date : 2016.07.05 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTE011N10RH8 BVDSS 100V ID@VGS=10V, TC=25°C 45A ID@VGS=10V, TA=25°C 15A RDSON(TYP) VGS=10V, ID=11.5A 9.5mΩ Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Av...

Cystech Electonics

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