MTD2K5P20KM3

CYStech Electronics Corp. -200V P-Channel Enhancement Mode MOSFET MTD2K5P20KM3 Spec. No. : C097M3 Issued Date : 2016.06.17 Revised Date : Page No. : 1/9 Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating and halogen-free package BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-0.6A RDSON@VGS=-4V, ID=-0.6A -200V -0.67A 1.9Ω(typ.) 2Ω(typ.) Symbol MTD2K5P20KM3 Outline SOT-89 G：Gate S：Source D：Drain G DD S Ordering Information Device MTD2K5P20KM3-0-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 : 1000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTD2K5P20KM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C097M3 Issued Date : 2016.06.17 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) ID IDM PD Linear Derating Factor Operating Junction and Storage Temperature Tj, Tstg Note : *1. Pulse width limited by maximum junction temperature *2. Surface mounted on 1 in² copper pad of FR-4 board *3. Pulse width≤300μs, duty cycle≤2% Limits -200 ±20 -0.67 -0.54 -2.8 *1, 3 2 *2 0.02 -55~+150 Unit V A...