Document
CYStech Electronics Corp.
Spec. No. : C140I3 Issued Date : 2015.06.01 Revised Date : Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTD07N04I3
BVDSS ID@VGS=10V, TC=25°C
40V 50A
RDS(ON)@VGS=10V, ID=20A 6.3 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=10A 8.4 mΩ(typ)
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package
Symbol
MTD07N04I3
Outline
TO-251
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
Package
Shipping
MTD07N04I3-0-UA-G
TO-251 (Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTD07N04I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C140I3 Issued Date : 2015.06.01 Revised Date : Page No. : 2/ 8
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1) Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V(silicon limit) (Note 1)
Continuous Drain Current @TC=100°C, VGS=10V(silicon limit) (Note 1)
Continuous Drain Current @TC=25°C, VGS=10V(package limit) (Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=0.5mH, ID=18A, VDD=25V
Symbol VDS VGS
ID
IDSM IDM IAS EAS
TC=25°C
Power Dissipation
TC=100°C TA=25°C
TA=70°C
Operating Junction and Storage Temperature
(Note 1) (Note 1) (Note 2) (Note 2)
PD
PDSM Tj, Tstg
Limits
40 ±20 63 40 50 13.5 10.8 200 18
81
54 21 2.5 1.6 -55~+150
Unit V
A
mJ W °C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol RθJC RθJA
Value 2.3 50
Unit °C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C.
3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
MTD07N04I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C140I3 Issued Date : 2015.06.01 Revised Date : Page No. : 3/ 8
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static BVDSS
∆BVDSS/∆Tj VGS(th) *GFS IGSS
IDSS
*RDS(ON)
40 -
-
V VGS=0V, ID=250μA
- 0.03 -
V/°C Reference to 25°C, ID=250μA
1.5 - 2.5
V VDS = VGS, ID=250μA
- 22 -
S VDS =5V, ID=10A
- - ±100 nA VGS=±20V
-
-
1 10
μA
VDS =32V, VGS =0V VDS =32V, VGS =0V, Tj=85°C
-
6.3 7.6 8.4 10
mΩ
VGS =10V, ID=20A VGS =4.5V, ID=10A
Dynamic *Qg(VGS=10V) *Qg(VGS=4.5V)
*Qgs *Qgd *td(ON)
*tr *td(OFF)
*tf Ciss Coss Crss
Rg
-
-
31 15.7
6 7 14.6 18.8 43.4 8 1517 188 116
1.6
46.5 -
-
nC VDD=20V, ID=20A,VGS=10V
ns VDD=20V, ID=1A, VGS=10V, RG=1Ω pF VGS=0V, VDS=20V, f=1MHz Ω f=1MHz
Source-Drain Diode
*IS -
*VSD
-
*trr -
*Qrr -
- 50 0.86 1.1 14 8.6 -
A
V IS=20A, VGS=0V
ns nC
VGS=0, IF=20A, dIF/dt=360A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTD07N04I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C140I3 Issued Date : 2015.06.01 Revised Date : Page No. : 4/ 8
Typical Characteristics
Typical Output Characteristics 180
10V,9V,8V,7V 150
VGS=6V
120
ID, Drain Current (A)
90
60
30
0 0
VGS=5V VGS=4.5V VGS=4V 12 34 VDS, Drain-Source Voltage(V)
5
BVDSS, Normalized Drain-Source Breakdown Voltage
Brekdown Voltage vs Ambient Temperature 1.4
1.2
1
0.8
0.6 ID=250μA, VGS=0V
0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current 100
VGS=4.5V 10
VGS=10V
Reverse Drain Current vs Source-Drain Voltage 1.2
VGS=0V 1.0
0.8
Tj=25°C
0.6 Tj=150°C
0.4
VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State Resistance(mΩ)
RDS(on), Static Drain-Source OnState Resistance(mΩ)
1 0.01
0.1 1 10 ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source Voltage
70 60 ID=20A
50
40
30
20
10
0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V)
RDS(on), Normalized Static DrainSource On-State Resistance
0.2 0
4 8 12 16 IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2.4 2.0 VGS=10V, ID=20A
RDS(ON)@Tj=25°C : 6.3mΩ typ. 1.6
1.2
0.8
VGS=4.5V, ID=10A 0.4 RDS(ON)@Tj=25°C : 8.4mΩtyp.
0.0 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
MTD07N04I3
CYStek Product Specification
VGS(th).