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MTD07N04I3 Dataheets PDF



Part Number MTD07N04I3
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTD07N04I3 DatasheetMTD07N04I3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C140I3 Issued Date : 2015.06.01 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTD07N04I3 BVDSS ID@VGS=10V, TC=25°C 40V 50A RDS(ON)@VGS=10V, ID=20A 6.3 mΩ(typ) RDS(ON)@VGS=4.5V, ID=10A 8.4 mΩ(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package Symbol MTD07N04I3 Outline TO-251 G:Gate D:Drain S:Source G DS Ordering In.

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CYStech Electronics Corp. Spec. No. : C140I3 Issued Date : 2015.06.01 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTD07N04I3 BVDSS ID@VGS=10V, TC=25°C 40V 50A RDS(ON)@VGS=10V, ID=20A 6.3 mΩ(typ) RDS(ON)@VGS=4.5V, ID=10A 8.4 mΩ(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package Symbol MTD07N04I3 Outline TO-251 G:Gate D:Drain S:Source G DS Ordering Information Device Package Shipping MTD07N04I3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA: 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTD07N04I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140I3 Issued Date : 2015.06.01 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V(silicon limit) (Note 1) Continuous Drain Current @TC=100°C, VGS=10V(silicon limit) (Note 1) Continuous Drain Current @TC=25°C, VGS=10V(package limit) (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche Energy @ L=0.5mH, ID=18A, VDD=25V Symbol VDS VGS ID IDSM IDM IAS EAS TC=25°C Power Dissipation TC=100°C TA=25°C TA=70°C Operating Junction and Storage Temperature (Note 1) (Note 1) (Note 2) (Note 2) PD PDSM Tj, Tstg Limits 40 ±20 63 40 50 13.5 10.8 200 18 81 54 21 2.5 1.6 -55~+150 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2) Symbol RθJC RθJA Value 2.3 50 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. 3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. MTD07N04I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140I3 Issued Date : 2015.06.01 Revised Date : Page No. : 3/ 8 Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) 40 - - V VGS=0V, ID=250μA - 0.03 - V/°C Reference to 25°C, ID=250μA 1.5 - 2.5 V VDS = VGS, ID=250μA - 22 - S VDS =5V, ID=10A - - ±100 nA VGS=±20V - - 1 10 μA VDS =32V, VGS =0V VDS =32V, VGS =0V, Tj=85°C - 6.3 7.6 8.4 10 mΩ VGS =10V, ID=20A VGS =4.5V, ID=10A Dynamic *Qg(VGS=10V) *Qg(VGS=4.5V) *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg - - 31 15.7 6 7 14.6 18.8 43.4 8 1517 188 116 1.6 46.5 - - nC VDD=20V, ID=20A,VGS=10V ns VDD=20V, ID=1A, VGS=10V, RG=1Ω pF VGS=0V, VDS=20V, f=1MHz Ω f=1MHz Source-Drain Diode *IS - *VSD - *trr - *Qrr - - 50 0.86 1.1 14 8.6 - A V IS=20A, VGS=0V ns nC VGS=0, IF=20A, dIF/dt=360A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTD07N04I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140I3 Issued Date : 2015.06.01 Revised Date : Page No. : 4/ 8 Typical Characteristics Typical Output Characteristics 180 10V,9V,8V,7V 150 VGS=6V 120 ID, Drain Current (A) 90 60 30 0 0 VGS=5V VGS=4.5V VGS=4V 12 34 VDS, Drain-Source Voltage(V) 5 BVDSS, Normalized Drain-Source Breakdown Voltage Brekdown Voltage vs Ambient Temperature 1.4 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Static Drain-Source On-State resistance vs Drain Current 100 VGS=4.5V 10 VGS=10V Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=0V 1.0 0.8 Tj=25°C 0.6 Tj=150°C 0.4 VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) RDS(on), Static Drain-Source OnState Resistance(mΩ) 1 0.01 0.1 1 10 ID, Drain Current(A) 100 Static Drain-Source On-State Resistance vs Gate-Source Voltage 70 60 ID=20A 50 40 30 20 10 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(on), Normalized Static DrainSource On-State Resistance 0.2 0 4 8 12 16 IDR, Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture 2.4 2.0 VGS=10V, ID=20A RDS(ON)@Tj=25°C : 6.3mΩ typ. 1.6 1.2 0.8 VGS=4.5V, ID=10A 0.4 RDS(ON)@Tj=25°C : 8.4mΩtyp. 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) MTD07N04I3 CYStek Product Specification VGS(th).


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