MTD011N10RH8

CYStech Electronics Corp. Spec. No. : C169H8 Issued Date : 2015.11.23 Revised Date : 2016.04.27 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTD011N10RH8 Features BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=11.5A RDSON(TYP) VGS=4.5V, ID=9.5A 100V 45A 13.8A 9.2mΩ 12.8mΩ  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Repetitive Avalanche Rated  Pb-free lead plating and Halogen-free package Symbol MTD011N10RH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTD011N10RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTD011N10RH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169H8 Issued Date : 2015.11.23 Revised Date : 2016.04.27 Page No. : 2/10 Absolute Maximum Ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25C, VGS=10V (Note 1) Continuous Drain Current @ TC=100C, VGS=10V (Note 1) Continuous Drain Current @ TA=25C, VGS=10V (Note 2) Continuous Drain Current @ TA=70C, VGS=10V (Note 2) Continuous Drain Current @ TA=85C, VGS=10V (Note 2) Pulsed Drain Current (Note 3) Avalanche Current (Note 3) Avalanche Energy @ L=0.5mH, I...