N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTD011N10RJ3
Spec. No. : C169J3 Issued Date : 2016.07...
Description
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTD011N10RJ3
Spec. No. : C169J3 Issued Date : 2016.07.27 Revised Date : Page No. : 1/ 9
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=11A
RDS(ON)@VGS=6V, ID=6A
100V 48A
10.6A 8.4 mΩ(typ) 9.4 mΩ(typ)
Symbol
MTD011N10RJ3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTD011N10RJ3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD011N10RJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C169J3 Issued Date : 2016.07.27 Revised Date : Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current @ VGS=10V
Avalanche Current @L=0.1mH
Single Pulse Avalanche Energy @ L=0.5mH, ID=38 Amps, VDD=50V
TC=25°C
Power Dissipation
TC=100°C TA=25°C
TA=70°C
Operating Junction ...
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