MTB5D0P03Q8

CYStech Electronics Corp. Spec. No. : C965Q8 Issued Date : 2014.12.03 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB5D0P03Q8 BVDSS ID@VGS=-10V, TA=25°C ID@VGS=-4.5V, TA=25°C ID@VGS=-10V, TC=25°C ID@VGS=-4.5V, TC=25°C Features Simple drive requirement Low on-resistance Fast switching speed Pb-free and halogen-free package RDSON@VGS=-10V, ID=-20A RDSON@VGS=-4.5V, ID=-17A -30V -20A -16A -28A -22A 3.0mΩ(typ) 4.2mΩ(typ) Equivalent Circuit MTB5D0P03Q8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTB5D0P03Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB5D0P03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C965Q8 Issued Date : 2014.12.03 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C , VGS=-10V Continuous Drain Current @TA=70 °C , VGS=-10V Continuous Drain Current @TA=25 °C , VGS=-4.5V Continuous Drain Current @TA=70 °C , VGS=-4.5V Continuous Drain Current @TC=25 °C , VGS=-10V Continuous Drain Current @TC=100 °C , VGS=-10V Continuous Drain Current @TC=25 °C , VGS=-4.5V Co...