MTB5D0P03J3

CYStech Electronics Corp. Spec. No. : C965J3 Issued Date : 2014.09.15 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB5D0P03J3 BVDSS ID @VGS=-10V RDS(ON)@VGS=-10V, ID=-25A RDS(ON)@VGS=-4.5V, ID=-10A -30V -88A 3.7mΩ(typ) 5.1mΩ(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free package Equivalent Circuit MTB5D0P03J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB5D0P03J3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB5D0P03J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=175°C, TC=25°C, VGS=-10V (Note 1) Continuous Drain Current @ TJ=175°C, TC=100°C, VGS=-10V (Note 1) Continuous Drain Current @TA=25°C, VGS=-10V (Note 2) Continuous Drain Current @TA=70°C, VGS=-10V (Note 2) Pulsed Drain Current (Note 3) Avalanche Current (Note 3) Avalanche Energy @ L=0.5mH, ID=-26A, RG=25Ω (Note 2) VDS VGS ID IDSM IDM IAS EAS TC=25°C Total Power Dissipation TC=100°C TA=25°C TA=70°C Operating Junction and Storage Temperature Range (Note...