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MTB50N10E3
N-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp. Spec. No. : C893E3 Issued Date : 2016.06.01 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB50N10E3 BVDSS Features Low Gate Charge Simple Drive Requirement ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=20A Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lea...
Cystech Electonics
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MTB50N10E3
N-Channel Enhancement Mode Power MOSFET
- Cystech Electonics
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