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MTB110P08KN6

P-Channel Enhancement Mode Power MOSFET

Description

CYStech Electronics Corp. Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 1/8 -80V P-Channel Enhancement Mode Power MOSFET MTB110P08KN6 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C RDSON(TYP) VGS=-10V, ID=-2A VGS=-4.5V, ID=-1A -80V -3.7A -2.9A 104mΩ 141mΩ Features Simple drive requirement Low on-resistance Small package ...

Cystech Electonics

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