MTB080P06Q8

CYStech Electronics Corp. Spec. No. : C069Q8 Issued Date : 2016.01.29 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06Q8 BVDSS ID@ VGS=-10V, TA=25°C RDSON @VGS=-10V, ID=-4A RDSON @VGS=-4.5V, ID=-3A -60V -4A 80.3mΩ(typ.) 108mΩ(typ.) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating package Equivalent Circuit MTB080P06Q8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTB080P06Q8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB080P06Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C069Q8 Issued Date : 2016.01.29 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=6mH, ID=-4A, VDD=-15V Repetitive Avalanche Energy @ L=0.05mH Total Power Dissipation TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IAS EAS EAR PD Tj, Tstg Limits -60 ±20 -4 -3.2 -18 *1 -4 48 2.5 *2 3.1 *3 2 *3 -55~+150 Unit V A mJ W °C Thermal Data Param...