MTB080P06N3

CYStech Electronics Corp. Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET MTB080P06N3 BVDSS ID@VGS=-10V, TA=25°C RDSON(TYP) VGS=-10V, ID=-2A VGS=-4.5V, ID=-1.7A -60V -2.5A 80mΩ 109mΩ Features Advanced trench process technology High density cell design for ultra low on resistance Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTB080P06N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTB080P06N3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=-10V Pulsed Drain Current TA=25°C TA=70°C (Note 1&2) Maximum Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Tj, Tstg Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 2/ 9 Limits -60 ±20 -2.5 (Note 3) -2 (Note 3) -10 1.25 0.8 -55~+150 Unit V A W °C Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient , max (Note 3) Thermal Resistance, Junction-...