P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 1/9
-60V P-Channel Enh...
Description
CYStech Electronics Corp.
Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 1/9
-60V P-Channel Enhancement Mode MOSFET
MTB080P06M3 BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-3A
RDSON@VGS=-4.5V, ID=-3A
-60V -3.2A
83mΩ(typ.) 112mΩ(typ.)
Features
Single Drive Requirement Ultra High Speed Switching Pb-free lead plating and halogen-free package
Symbol
MTB080P06M3
Outline
SOT-89
G:Gate S:Source D:Drain
G DD S
Ordering Information
Device MTB080P06M3-0-T2-G
Package
SOT-89 (Pb-free lead plating and halogen-free package)
Shipping 1000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 : 1000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB080P06M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃)
ID
IDM PD
Linear Derating Factor
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature
*2. Surface mounted on 1 in² copper pad of FR-4 board
*3. Pulse width≤300μs, duty cycle≤2%
Limits
-60 ±20 -3.2 -2.6 -18 *1, 3
2 *2 0.02
-55~+150
Unit
V
A
W W/°C
°C
...
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