MTB080P06M3

CYStech Electronics Corp. Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 1/9 -60V P-Channel Enhancement Mode MOSFET MTB080P06M3 BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-3A RDSON@VGS=-4.5V, ID=-3A -60V -3.2A 83mΩ(typ.) 112mΩ(typ.) Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating and halogen-free package Symbol MTB080P06M3 Outline SOT-89 G：Gate S：Source D：Drain G DD S Ordering Information Device MTB080P06M3-0-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 : 1000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTB080P06M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) ID IDM PD Linear Derating Factor Operating Junction and Storage Temperature Tj, Tstg Note : *1. Pulse width limited by maximum junction temperature *2. Surface mounted on 1 in² copper pad of FR-4 board *3. Pulse width≤300μs, duty cycle≤2% Limits -60 ±20 -3.2 -2.6 -18 *1, 3 2 *2 0.02 -55~+150 Unit V A W W/°C °C ...