DatasheetsPDF.com
MTB080P06L3
P-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp. Spec. No. : C069L3 Issued Date : 2016.03.14 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06L3 BVDSS ID @ TA=25°C, VGS=-10V RDSON@VGS=-10V, ID=-4A RDSON@VGS=-4.5V, ID=-2A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package -60V -3.3A 90mΩ (typ) 117mΩ (...
Cystech Electonics
Download MTB080P06L3 Datasheet
Similar Datasheet
MTB080P06J3
P-Channel Enhancement Mode Power MOSFET
- Cystech Electonics
MTB080P06L3
P-Channel Enhancement Mode Power MOSFET
- Cystech Electonics
MTB080P06M3
P-Channel Enhancement Mode Power MOSFET
- Cystech Electonics
MTB080P06N3
P-Channel Enhancement Mode Power MOSFET
- Cystech Electonics
MTB080P06N6
P-Channel Enhancement Mode Power MOSFET
- Cystech Electonics
MTB080P06Q8
P-Channel Enhancement Mode Power MOSFET
- Cystech Electonics
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)