MTB050P10J3

CYStech Electronics Corp. Spec. No. : C975J3 Issued Date : 2015.03.17 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB050P10J3 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TC=100°C ID@VGS=-10V, TA=25°C ID@VGS=-10V, TA=70°C RDS(ON)@VGS=-10V, ID=-15A Features RDS(ON)@VGS=-4.5V, ID=-12A Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating and halogen-free package -100V -24A -17A -4.1A -3.3A 45 mΩ(typ) 51 mΩ(typ) Symbol MTB050P10J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB050P10J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB050P10J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C975J3 Issued Date : 2015.03.17 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=-10V, TC=25°C Continuous Drain Current @VGS=-10V, TC=100°C Continuous Drain Current @VGS=-10V, TA=25°C Continuous Drain Current @VGS=-10V, TA=70°C Pulsed Drain Current TC=25℃ (Note1) (Note1) (Note4) (Note4) (Note3) (Note1) Power Dissipation TC=100℃ TA=25℃ (Note1) (Note2) TA=70℃ (Note2) Single Pulse...