CHA7010

CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process: the backside of the chip is both RF and DC grounded bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process. Vctr Vc Main Features 10W output power High gain : > 18dB @ 10GHz High PAE : > 35% @ 10GHz On-chip bias control Linear collector current control High impedance interface for pulse mode Temperature compensated Chip size: 4.74 x 4.36 x 0.1 mm Vctr Vc Input Matching Network Inter-stage Output Combiner Vctr Vc Main Characteristics Tamb = +25°C Vctr Vc Symbol Parameter Min Typ F_op Operating frequency range 8.4 9.4 P_sat Saturated output power 10 P_1dBc Output power @ 1dBc 8 G_lin Linear gain 18 ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Max 10.4 Unit GHz W W dB Ref. : DSCHA70104054 - 23 Feb 04 1/7 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 9140...