MTA50N15H8

CYStech Electronics Corp. Spec. No. : C957H8 Issued Date : 2016.06.28 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTA50N15H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C Features Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=20A Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=10A Low Gate Charge Fast Switching Characteristic Pb-free lead plating and Halogen-free package 150V 26A 18.4A 4.6A 3.7A 44mΩ(typ) 43mΩ(typ) Symbol MTA50N15H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTA50N15H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTA50N15H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C957H8 Issued Date : 2016.06.28 Revised Date : Page No. : 2/ 9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Continuous Drain Current @TA=25°C, VGS=10V Continuous Drain Current @TA=70°C, VGS=10V Pulsed Drain Current Avalanche Current @ L=0.1mH Single Pulse Avalanche Energy @ L=1mH, ID=10...