Dual N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C073Q8 Issued Date : 2016.07.04 Revised Date : Page No. : 1/9
Dual N-Channel Enh...
Description
CYStech Electronics Corp.
Spec. No. : C073Q8 Issued Date : 2016.07.04 Revised Date : Page No. : 1/9
Dual N-Channel Enhancement Mode Power MOSFET
MTA020A01Q8 BVDSS ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDSON@VGS=10V, ID=7A
Features
Simple drive requirement Low on-resistance Fast switching speed Dual N-ch MOSFET package Pb-free lead plating & Halogen-free package
RDSON@VGS=4.5V, ID=5A
14V 7A
5.6A 15.4mΩ(typ) 21.7mΩ(typ)
Equivalent Circuit
MTA020A01Q8
Outline
SOP-8
D2 D2 D1 D1
G:Gate S:Source D:Drain
Pin 1
G2 S2 G1 S1
Ordering Information
Device MTA020A01Q8-0-T3-G
Package
SOP-8 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products
Product name
MTA020A01Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C073Q8 Issued Date : 2016.07.04 Revised Date : Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Symbol
VDS VGS
ID
IDM PD Tj, Tstg
Limi...
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