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MUR3040 Dataheets PDF



Part Number MUR3040
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description 30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes
Datasheet MUR3040 DatasheetMUR3040 Datasheet (PDF)

MUR3005 thru MUR3060 ® MUR3005 thru MUR3060 Pb Free Plating Product Pb 30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes Features Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classification 94V0 Glass passivated chip junctions Superfast recovery time, high voltage Low forward voltage, high current capability Low thermal resistance Low power loss, high efficiency High temperature soldering guaranteed: 260oC, 0.16”(4..

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MUR3005 thru MUR3060 ® MUR3005 thru MUR3060 Pb Free Plating Product Pb 30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes Features Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classification 94V0 Glass passivated chip junctions Superfast recovery time, high voltage Low forward voltage, high current capability Low thermal resistance Low power loss, high efficiency High temperature soldering guaranteed: 260oC, 0.16”(4.06mm)from case for 10 seconds Mechanical Data Cases: TO-3PN Package Type Terminals: Pure tin plated, lead free solderable per MIL-STD-750. Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 10in-lbs. Max. Weight: 0.2 ounce, 5.6 grams TO-3PN .142(3.60) .125(3.20) .604(15.35) .620(15.75) Unit: inch (mm) .199(5.05) .175(4.45) .600(15.25) .580(14.75) .776(19.70) .819(20.80) .087(2.20) .070(1.80) .126(3.20) .110(2.80) .050(1.25) .045(1.15) .225(5.70) .204(5.20) .095(2.40) .130(3.30) .145(3.70) .798(20.25) .777(19.75) .225(5.70) .204(5.20) .030(0.75) .017(0.45) Positive Suffix "PT" Negative Suffix "PA" Doubler Suffix "GD" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Common Cathode Suffix "PT" Common Anode Suffix "PA" Anode and Cathode Coexistence Suffix "GD" Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage MUR3005PT MUR3010PT MUR3020PT MUR3030PT MUR3040PT MUR3060PT SYMBOL MUR3005PA MUR3010PA MUR3020PA MUR3030PA MUR3040PA MUR3060PA UNIT MUR3005GD MUR3010GD MUR3020GD MUR3030GD MUR3040GD MUR3060GD VRRM 50 100 200 300 400 600 V VRMS 35 70 140 210 280 420 V VDC 50 100 200 300 400 600 V Maximum Average Forward Rectified Current TC=125oC IF(AV) 30.0 A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) IFSM 300 A Maximum Instantaneous Forward Voltage @ 15.0 A Maximum DC Reverse Current @TJ=25oC At Rated DC Blocking Voltage @TJ=125oC Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) VF IR Trr CJ 0.95 35 1.3 10 500 150 1.5 V uA uA 60 nS pF Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 oC NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Thermal Resistance junction to terminal. (3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ MUR3005 thru MUR3060 ® AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 30 25 20 15 10 5 60 Hz Resistive or Inductive load 0 0 50 100 LEAD TEMPERATURE, oC 150 FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 MUR3005-MUR3020 1.


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