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BYW80-200G

ON Semiconductor

Power Rectifiers

BYW80-200 SWITCHMODEt Power Rectifiers This state−of−the−art device is designed for use in switching power supplies, in...


ON Semiconductor

BYW80-200G

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Description
BYW80-200 SWITCHMODEt Power Rectifiers This state−of−the−art device is designed for use in switching power supplies, inverters and as free wheeling diodes. Features Ultrafast 35 Nanosecond Recovery Time 175°C Operating Junction Temperature Popular TO−220 Package Epoxy Meets UL 94 V−0 @ 0.125 in Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Pb−Free Package is Available* Mechanical Characteristics Case: Epoxy, Molded Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MAXIMUM RATINGS Rating Symbol Values Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM 200 V VRWM VR Average Rectified Forward Current IF(AV) 8.0 A Total Device, (Rated VR), TC = 150°C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 150°C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFM IFSM 16 A 100 A Operating Junction Temperature and Storage Temperature Range TJ, Tstg −65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com...




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