CHA5010B

CHA5010b X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010b is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vg Main Features ¦ Broadband performance : 9-10.5GHz ¦ 27dBm output power (pulsed meas., -1dB gain compression) ¦ 15dB gain ¦ ± 1.5dB gain flatness ¦ Chip size : 2,09 x 1,27 x 0.10 mm IN Vd OUT Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Pout Small signal gain Output power (Pulsed meas., Pin = +13dBm) Min Typ Max Unit 9 10.5 GHz 14 15 dB 26 27 dBm ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA50100096 - 05-Apr-00 1/4 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France ...