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BUX11N

Part Number	BUX11N
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Sep 2, 2016
Detailed Description	isc Silicon NPN Power Transistor BUX11N DESCRIPTION ·Low Collector Saturation Voltage ·High Switching Speed ·High Curr...
Datasheet	BUX11N PDF File

Overview

isc Silicon NPN Power Transistor BUX11N DESCRIPTION ·Low Collector Saturation Voltage ·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·Linear and switching industrial equipment Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.
5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Te...

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