isc Silicon NPN Power Transistor
BUX10P
DESCRIPTION ·High Switching Speed ·High Current Capability ·Minimum Lot-to-Lot...
isc Silicon
NPN Power
Transistor
BUX10P
DESCRIPTION ·High Switching Speed ·High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Motor control ·Linear and switching industrial equipment
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCEX VCEO
Collector-Base Voltage
Collector-Emitter Voltage VBE= -1.5V
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
160
V
160
V
125
V
7
V
25
A
30
A
5
A
150
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W
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isc Silicon
NPN Power
Transistor
BUX10P
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
125
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
0.6
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A ;IB= 2A
1.2
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 20A ;IB= 2A
2.0
V
ICEO
Collector Cutoff Current
ICBO
Collector-Base Cutoff Current
IEBO
Emitter Cutoff Curren...
