isc Silicon NPN Power Transistor
BUX10A
DESCRIPTION ·High Switching Speed ·High Current Capability ·Minimum Lot-to-Lot...
isc Silicon
NPN Power
Transistor
BUX10A
DESCRIPTION ·High Switching Speed ·High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for control amplifiers and power switching circuits,
such as converters, inverters, switching
regulators, and switching-control amplifiers.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCER VCEX VCEO
Collector-Base Voltage
Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.5V
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
170
V
160
V
170
V
125
V
7
V
25
A
30
A
5
A
150
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCBO(SUS) Collector-Base Sustaining Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A
VBE(sat) Base-Emitte...
