isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.) ·High Speed...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Intended in fast switching applications for high output powers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
800
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
17
A
IB
Base Current-Continuous
5
A
IBM
Base Current-Peak
PT
Total Power Dissipation @ TC≤25℃
TJ
Junction Temperature
7
A
120
W
175
℃
Tstg
Storage Temperature Range
-65~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.25 ℃/W
BUW77
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
BUW77
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
1.5
V
IEBO
Emitter cut-off current
ICBO
Collector –Base Cutoff Current
hFE
DC Current Gain
VEB=7V; IC=0
VCB= 800V; IE= 0 VCB= 800V; IE= 0; Tc= 125℃
IC= 5A; VCE= 1.5V
6
1.0 mA
1.0 10
mA
fT
Current-Gain—B...