BUW74

isc Silicon NPN Power Transistor BUW74 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended in fast switching applications for high output powers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 17 A IB Base Current-Continuous 5 A IBM Base Current-Peak PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 7 A 120 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A IEBO Emitter cut-off current ICBO Collector -Base Cutoff Current hFE-1 DC Current Gain VEB=7V; IC=0 VCB= 400V; IE = 0 VCB= 400V; IE = 0; Tc= 125℃ IC= 5A; VCE= 1.5V hFE-2 DC Current Gain IC= 7A; VCE= 1.5V BUW74 MIN TYP. MAX UNIT 250 V 1.5 V 1.5 ...