isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 200V(Min.) ·Low Collec...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 200V(Min.) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.) @IC= 12A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
300
V
200
V
7
V
20
A
25
A
4
A
6
A
120
W
175
℃
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W
BUW73
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector –Base Cutoff Current
IEBO
Emitter Cutoff Current
IC= 12A; IB= 1.2A
VCB= 300V;IE=0 VCB= 300V; IE=0;TC=125℃
VEB= 7V; IC= 0
BUW73
MIN TYP. M...