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BUW73

Inchange Semiconductor

Silicon NPN Power Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min.) ·Low Collec...


Inchange Semiconductor

BUW73

File Download Download BUW73 Datasheet


Description
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 12A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 300 V 200 V 7 V 20 A 25 A 4 A 6 A 120 W 175 ℃ -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W BUW73 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector –Base Cutoff Current IEBO Emitter Cutoff Current IC= 12A; IB= 1.2A VCB= 300V;IE=0 VCB= 300V; IE=0;TC=125℃ VEB= 7V; IC= 0 BUW73 MIN TYP. M...




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