DatasheetsPDF.com

BUW72

Part Number	BUW72
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Sep 2, 2016
Detailed Description	isc Silicon NPN Power Transistor BUW72 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min.) ·Low C...
Datasheet	BUW72 PDF File

Overview

isc Silicon NPN Power Transistor BUW72 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min.
) ·Low Collector Saturation Voltage- : VCE(sat)= 0.
8V(Max.
) @IC= 4A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in clocked voltage converters.
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 450 V 400 V 7 V 10 A 3 ...

Similar Datasheet

BUW1015 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - STMicroelectronics
BUW11 NPN Transistor - INCHANGE
BUW11 SILICON POWER TRANSISTOR - SavantIC
BUW11A NPN Transistor - INCHANGE
BUW11A SILICON POWER TRANSISTOR - SavantIC
BUW11AF Silicon diffused power transistors - NXP
BUW11AF NPN Transistor - INCHANGE
BUW11AF SILICON POWER TRANSISTOR - SavantIC
BUW11AW Silicon diffused power transistors - NXP
BUW11AW Silicon NPN Power Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)