BUW12F

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 6A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching industrial applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 20 A IB Base Current 4 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 6 A 34 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.7 ℃/W BUW12F isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 6A; IB= 1.2A VCE=VCES ;VBE= 0 VCE=VCES ;VBE= 0;TC=125℃ VEB= 9V; IC= 0 hFE-1 DC Current Gain IC= 10mA; VCE= 5V hFE-2 DC Current Gain IC= 1A; VCE= 5V ...