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CHA3092RBF

United Monolithic Semiconductors

20-33GHz Medium Power Amplifier

CHA3092RBF 20-33GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Fea...


United Monolithic Semiconductors

CHA3092RBF

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Description
CHA3092RBF 20-33GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC (MMIC) in the package is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. ■ Broad band performance: 20-33GHz ■ Gain = 20dB (typical) ■ Output power (P-1dB): 19dBm (typical) ■ Return loss < -6dB ■ Low DC power consumption, 300mA ■ SMD leadless package ■ Dimensions: 5.08 x 5.08 x 0.97 mm3 It is supplied in a new SMD leadless chip carrier. SMD Package Dimensions "Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated by a trian...




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