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CHA2294

United Monolithic Semiconductors

35-40GHz Low Noise/ Variable Gain Amplifier

CHA2294 RoHS COMPLIANT 35-40GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA229...


United Monolithic Semiconductors

CHA2294

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Description
CHA2294 RoHS COMPLIANT 35-40GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2294 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features Frequency range: 35-40GHz 4.0dB Noise Figure. 22dB gain Gain control range: 15dB Low DC power consumption, 120mA @ 5V Chip size: 2.32 X 1.235 X 0.10 mm 26 24 22 20 18 16 14 12 10 8 Gain (dB) NF (dB) 6 4 2 0 35 36 37 38 39 Frequency (GHz) Typical on wafer measurements :Gain & NF 40 Main Characteristics Tamb. =25°C Symbol Parameter Fop Operating frequency range G Small signal gain ...




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