10-18GHz Low Noise / Variable Gain Amplifier
CHA2291
RoHS COMPLIANT
10-18GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA22...
Description
CHA2291
RoHS COMPLIANT
10-18GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2291 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process.
The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
Main Features
Frequency range: 10-18GHz 2.2dB Noise Figure. 23dB gain Gain control range: 25dB DC power consumption: 180mA @ 5V Chip size: 2.49 X 1.23 X 0.10 mm
26 24 22 20 18 16 14 12 10
8 6 4 2 0
10
Gain (dB)
NF (dB)
11 12 13 14 15 16 17 Frequency (GHz)
Typical on wafer measurements : Gain & NF
18
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G Small signal gain
NF No...
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