CHA2266

CHA2266 RoHS COMPLIANT 12.5-17GHz Low-Noise Driver Amplifier GaAs Monolithic Microwave IC Description The CHA2266 is a self biased, low-noise high gain driver amplifier. It is designed mainly for VSAT applications in Kuband. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured on a standard GaAs pHEMT process, with via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. IN VD 1 VD 2 OUT Main Features Broadband performance 12.5–17GHz 2.5dB noise figure 34dB gain, +/- 0.5dB gain flatness Low DC power consumption:130mA Saturated output power : 16dBm Chip size 2.32 x 1.02 x 0.1mm Gain & Return loss / dB ( Vds = 4V, Ids = 130mA ) 40 35 30 25 20 15 MS11 MS21 MS22 NF 10 5 4,1 2,9 2,5 2,0 1,9 1,6 1,5 1,5 2,2 0 -5 -10 -15 -20 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Frequency / GHz Main Characteristics Tamb=+25°C Symbol Parameter Fop G NF P1dB Operating frequency range Small signal gain Noise Figure Output power at 1 dB gain compression Min Typ Max 12.5 31 34 2.5 14.5 17 3 Unit GHz dB dB dBm ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA22667082- 23 Mar 07 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 ...