CHA2190

CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Feature Broad band performance 20-30GHz 2.2dB noise figure 15dB gain, ± 0.5dB gain flatness Low DC power consumption, 50mA 20dBm 3rd order intercept point Chip size : 1.670 x 1.03x 0.1mm dBSij & NF ( dB ) 18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 14 dBS11 dBS21 dBS22 16 18 20 22 24 26 28 30 Frequency ( GHz ) NF 32 34 36 Main Characteristics Tamb = +25°C On wafer typical measurement Symbol Parameter NF Noise figure at freq : 40GHz G Gain ∆G Gain flatness Min Typ Max 2.2 3 13 15 ± .0.5 ± 1 Unit dB dB dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions !...