SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3320
DESCRIPTION ·Wi...
SavantIC Semiconductor
Silicon
NPN Power
Transistors
www.DataSheet4U.com
Product Specification
2SC3320
DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability
APPLICATIONS ·Switching
regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers
PINNING PIN 1 2 3
DESCRIPTION
Base Collector;connected to mounting base Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO IC
Emitter-base voltage Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth (j-c)
Thermal resistance from junction to case
VALUE 500 400 7 15 5 80 150
-65~150
UNIT V V V A A W
VALUE 1.56
UNIT /W
SavantIC Semiconductor
Silicon
NPN Power
Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.2A
ICBO Collector cut-off current
VCB=500V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=6A ; V...