HM5N60

N R N-CHANNEL MOSFET HM5N60 MAIN CHARACTERISTICS Package ID .0 A VDSS 600 V Rdson（@Vgs=10V） 2.4Ω Qg 13.3nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 9pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 9pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking Package HMN60I HMN60I IPAK HM N60K HMN60K DPAK HMN60 HMN60 TO-220C HM N60F HMN60F TO-220MF Halogen Free NO NO NO NO Packaging Tube Tube Tube Tube Device Weight 0.35 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ) ：201007A Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com 1/11 R ABSOLUTE RATINGS (Tc=25℃) HM5N60 Parameter Symbol HM5N60I/K Value HM5N60 HM5N60F － Drain-Source Voltage VDSS Drain Current -continuous ID T=25℃ T=100℃ （ 1） Drain Current - pulse （note 1） IDM Gate-Source Voltage VGSS （ 2） Single Pulsed Avalanche Energy EAS note 2） （ 1） Avalanche Current （note 1） IAR （ 1） Repetitive Avalanche Current （note 1） EAR （ 3） Peak Diode Recovery dv/dt dv/dt （note 3） Power Dissipation PD TC=25℃ -Derate above 51 0.39 25℃ Operating and Storage Temperature Range TJ，TSTG Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature 600 5.0 2.5 16 ±30 240 5.0 10.0 5.5 100 0.80 -55～+150 300 5.0* 2.5* 16* 33 0.26 Uni t V A A ...