MDP6N60

MDP6N60/MDF6N60 N-Channel MOSFET 600V, 6A, 1.4Ω General Description These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  ID = 6.0A  RDS(ON) ≤ 1.4Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching D TO-220 MDP Series TO-220F MDF Series Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Mounting Torque * Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics G S ` Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP6N60 MDF6N60 600 ±30 6.0 6.0* 3.8 3.8* 24 24* 131 37.9 1.05 0.3 13.1 4.5 220 -55~150 5 Unit V V A A A W W/ oC mJ V/ns mJ oC Kgf-cm Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Symbol RθJA RθJC MDP6N60 62.5 0.95 MDF6N60 62.5 3.3 Unit oC/W Feb. 2021 Version 1.41Magnachip Semiconductor Ltd. Ordering Information Part Number MDP6N60TH MDF6N60TH Temp. Range -55~150oC -55~150oC Package TO-220 TO-220F...