ME8107-G

ME8107/ME8107-G P-Channel Enhancement Mode MOSFET, ESD Protected GENERAL DESCRIPTION The ME8107 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View FEATURES ● RDS(ON)≦7.2mΩ@VGS=-10V ● RDS(ON)≦12mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● LCD Display inverter e Ordering Information: ME8107(Pb-free) ME8107-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation* Operating Junction Temperature TA=25℃ TA=70℃ TA=25℃ TA=70℃ Thermal Resistance-Junction to Ambient* Symbol VDS VGS ID IDM PD TJ RθJA Maximum Ratings -35 ±20 -13 -10 -52 2 1.3 -55 to 150 62.5 * The device mounted on 1in2 FR4 board with 2 oz copper 1.2 Mar, 2012-Ver1.3 Unit V V A A W ...