PD -94907
IRG4BC20KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE Features
Short Circuit...
PD -94907
IRG4BC20KDPbF
INSULATED GATE BIPOLAR
TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE Features
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220AB package Lead-Free
C
G E
n-channel
Benefits
Latest generation 4 IGBTs offer highest power density controls possible HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and switching losses
This part replaces the IRGBC20KD2 and IRGBC20MD2 products
For hints see design tip 97003
motor
Short Circuit Rated UltraFast IGBT VCES = 600V
VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10...