Document
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP)
Complementary Silicon Plastic Power Transistors
Designed for use in general purpose amplifier and switching applications.
Features
• Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage TIP41G, TIP42G TIP41AG, TIP42AG TIP41BG, TIP42BG TIP41CG, TIP42CG
VCEO
40 60 80 100
Vdc
Collector−Base Voltage TIP41G, TIP42G TIP41AG, TIP42AG TIP41BG, TIP42BG TIP41CG, TIP42CG
VCB Vdc 40 60 80 100
Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation
@ TC = 25°C Derate above 25°C
VEB 5.0 Vdc IC 6.0 Adc ICM 10 Adc IB 2.0 Adc PD
65 W 0.52 W/°C
Total Power Dissipation @ TA = 25°C Derate above 25°C
PD 2.0 W
0.016
W/°C
Unclamped Inductive Load Energy (Note 1)
E
62.5 mJ
Operating and Storage Junction, Temperature Range
TJ, Tstg – 65 to +150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 11
1
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6 AMPERE COMPLEMENTARY SILICON
POWER TRANSISTORS 40−60−80−100 VOLTS,
65 WATTS
PNP
COLLECTOR 2,4
NPN
COLLECTOR 2,4
1 BASE
1 BASE
3 EMITTER
3 EMITTER
4
12 3
TO−220 CASE 221A
STYLE 1
MARKING DIAGRAM
TIP4xxG AYWW
TIP4xx xx
A Y WW G
= Device Code = 1, 1A, 1B, 1C
2, 2A, 2B, 2C = Assembly Location = Year = Work Week = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
Publication Order Number: TIP41A/D
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP)
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient
Symbol RqJC RqJA
Max 1.67 57
Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) TIP41G, TIP42G TIP41AG, TIP42AG TIP41BG, TIP42BG TIP41CG, TIP42CG
VCEO(sus)
Vdc
40 − 60 − 80 − 100 −
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP41G, TIP41AG, TIP42G, TIP42AG (VCE = 60 Vdc, IB = 0) TIP41BG, TIP41CG, TIP42BG, TIP42CG
ICEO
− −
mAdc 0.7 0.7
Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) TIP41G, TIP42G (VCE = 60 Vdc, VEB = 0) TIP41AG, TIP42AG (VCE = 80 Vdc, VEB = 0) TIP41BG, TIP42BG (VCE = 100 Vdc, VEB = 0) TIP41CG, TIP42CG
ICES
mAdc
− 400
− 400
− 400
− 400
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 2)
IEBO
−
1.0 mAdc
DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc)
Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE
VCE(sat) VBE(on)
30 15 − −
− − 75
Vdc 1.5
Vdc 2.0
Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
MHz −
Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe 20
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP)
TA TC 4.0 80
PD, POWER DISSIPATION (WATTS)
3.0 60 2.0 40 1.0 20
TC TA
00 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (°C)
Figure 1. Power Derating
VCC + 30 V
+11 V 0 - 9.0 V
25 ms
tr, tf ≤ 10 ns DUTY CYCLE = 1.0%
RC SCOPE
RB
D1
- 4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA
Figure 2. Switching Time Test Circuit
t, TIME ( μs)
2.0
1.0 0.7 0.5
0.3 0.2
0.1 0.07 0.05
0.03 0.02
0.06
0.1
TJ = 25°C VCC = 30 V IC/IB = 10
tr
td @ VBE(off) ≈ 5.0 V
0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn−On Time
4.0 6.0
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r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP)
1.0 0.7 D = 0.5 0.5
0.3 0.2
0.2
0.1 0.1
0.07 0.05
0.05 0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 1.0
0.2
ZqJC(t) = r(t) RqJC RqJC = 1.92°C/W MAX D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
.