2N6402

2N6400-2N6405 SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off-state voltage (1) (TJ = -40 to 125°C, sine wave 50 to 60Hz, gate open) 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405 VDRM VRRM 50 100 200 400 600 800 Volts On-state RMS current (180° conduction angles), TC = 100°C) IT(RMS) 16 Amps Average on-state current (180° conduction angles, TC = 100°C) IT(AV) Amps 10 Peak non-repetitive surge current (1/2 cycle, sine wave 60Hz, TJ = 90°C) Circuit fusing (t = 8.3ms) ITSM Amps 160 I2t 145 A2s Forward peak gate power (pulse width ≤ 1.0µs, TC = 100°C) Forward average gate power (t = 8.3ms, TC = 100°C) PGM PG(AV) Watts 20 Watts 0.5 Forward peak gate current (Pulse width ≤ 1.0µs, TC = 100°C) IGM Amps 2.0 Operating junction temperature range TJ -40 to 125 °C Storage temperature range Tstg -40 to 150 °C 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage, however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Maximum lead te...