CS50N06

BR50N06(CS50N06) N-CHANNEL MOSFET/N MOS :：、DC/DC 、。 Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. :RDS(on)，，Crss ，。 Features: Low RDS(on),low gate charge,low Crss,fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 60 V ID(Tc=25℃) 50 A ID(Tc=100℃) 35.4 A IDM 200 A VGS ±20 V EAS 490 mJ EAR 12 mJ PD(Tc=25℃) 120 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=60V VDS=48V VGS=0V TC=150℃ IGSS VGS=±20V VDS=0V VGS(th) VDS=VGS ID=250μA Qg VDS=48V ID=50A VGS=10V RDS(on) VGS=10V ID=25A VSD VGS=0V IS=50A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDD=30V ID=25A RG=25Ω tf Min 60 2 Typ 32 0.018 1050 460 70 20 100 80 85 Max 1.0 10 ±0.1 4 42 0.022 1.5 1365 600 90 50 210 170 180 Unit V μA μA V nC Ω V pF ns FOSHAN BLUE ROCKET ELECTRONICS CO., LTD. BR50N06(CS50N06) FOSHAN BLUE ROCKET ELECTRONICS CO., LTD. ...