GaAs MMIC
CGY 96
GaAs MMIC
l l l l l l
Power amplifier for GSM class 4 phones 3.2 W (35dBm) output power at 3.5 V Overall power ...
Description
CGY 96
GaAs MMIC
l l l l l l
Power amplifier for GSM class 4 phones 3.2 W (35dBm) output power at 3.5 V Overall power added efficiency 50 % Fully integrated 3 stage amplifier Power ramp control Input matched to 50 ohms, simple output match
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (taped)
Package
CGY 96
CGY 96
Q62702G63
MW 16
Maximum ratings Characteristics Positive supply voltage Supply current Channel temperature Storage temperature Pulse peak power dissipation duty cycle 12.5%, ton=0.577ms Total power dissipation (Ts ≤ 80 °C) Symbol VD max. Value 9 4 150 -55...+150 tbd tbd Unit V A °C °C W W
ID TCh Tstg PPulse Ptot
Ts: Temperature at soldering point
Thermal Resistance Characteristics Channel-soldering point Symbol max. Value tbd Unit K/W
RthChS
Siemens Aktiengesellschaft Semiconductor Group
1 1
23.07.1998 1998-11-01 HL HF PE GaAs
CGY 96
Functional block diagramm:
VD1(1) VD2(2)
Vcontrol(8)
CGY96
Vneg(13)
current control circuit
RFin(16)
VD3/RFout(4,5,6)
GND1(14,15)
GND2(17)
Pin # 1 2 3 4,5,6 7 8 9,10,11, 12 13 14,15 16 (17)
Name VD1 VD2 n.c. VD3 / RFout n.c.
Configuration Drain voltage 1st stage Drain voltage 2nd stage Drain 3rd stage and RF-output -
Vcontrol Control voltage for power ramping n.c. Vneg Gnd1 RFin GND2 negative voltage for current control circuit Ground pin 1st stage RF Input Ground (backside of MW16 package)
Siemens Aktiengesellschaft Semiconductor Group
2 2
23.07....
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